Memory Properties of Ge quantum dots and rings MOS structure prepared by Pulsed Laser Deposition
نویسنده
چکیده
New memory structures using threshold shifting from charge stored in quantum dots (QDs) and quantum rings (QRs) of Germanium (Ge) are described. The QDs and QRs of Ge were prepared on a p-Si (100) matrix by means of pulsed laser deposition (PLD) using the droplet technique combined with rapid annealing. The perfect planar nanorings with welldefined sharp inner and outer edges were formed via an elastic self-transformation of droplet process, which is probably driven by the lateral strain of the Ge/Si layers under annealing treatment. A significant shift of threshold-voltage of 1.2V and 2.5 V were observed in Ge QDs and QRs memory devices, respectively, when an operating voltage of 8 V was implemented on the device. It is attributed to the effect of Coulomb blockade and better interface properties of the Ge nanostructures.
منابع مشابه
Growth of Ge Quantum Dots on Si(100)-(2×1) by Pulsed Laser Deposition
This Article is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Faculty Publications by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. Repository Citation Hegazy, M. S. and Elsayed-Ali, H. E., "Growth o...
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تاریخ انتشار 2009